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STPSC1206 Datasheet, ST Microelectronics

STPSC1206 diode equivalent, 600v power schottky silicon carbide diode.

STPSC1206 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 108.33KB)

STPSC1206 Datasheet
STPSC1206
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 108.33KB)

STPSC1206 Datasheet

Features and benefits


*
*
* No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description These diodes are manufactured using silicon.

Application

NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.

Description

These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery c.

Image gallery

STPSC1206 Page 1 STPSC1206 Page 2 STPSC1206 Page 3

TAGS

STPSC1206
600V
power
Schottky
silicon
carbide
diode
ST Microelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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