STP110N8F6 mosfet equivalent, n-channel power mosfet.
Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
' 7$%
*
* Very low on-resistance.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 techn.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
Order code STP110N8F6
$0Y
Table 1. Device summa.
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