STP110N8F6 mosfet equivalent, n-channel mosfet.
*Very low on-resistance
*Very low gate charge
*High avalanche ruggedness
*Low gate drive power loss
*100% avalanche tested
*Minimum Lot-to-Lot var.
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage.
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