STP110N7F6 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

Datasheet Details

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

6 Order code STP110N7F6 $0Y Table 1.

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production.

Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%.
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Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.