STP110N7F6 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% *
* Very low on-resistanc.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 techn.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N7F6 $0Y Table 1. Device summa.

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