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STP110N8F6 N-Channel MOSFET

STP110N8F6 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 *.

STP110N8F6 Features

* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP110N8F6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 110 85 440 PD Total Dissipation 200 Tj Operating Junction Tempe

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Datasheet Details

Part number
STP110N8F6
Manufacturer
INCHANGE
File Size
223.66 KB
Datasheet
STP110N8F6-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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