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STP11NM60 N-Channel MOSFET

STP11NM60 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 *.

STP11NM60 Features

* Typical RDS(on)=0.4Ω
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP11NM60 Applications

* Switching application
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation 160 Tj Operating Junction Temperat

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Datasheet Details

Part number
STP11NM60
Manufacturer
INCHANGE
File Size
201.20 KB
Datasheet
STP11NM60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STP11NM60-like datasheet