STP110N55F6 mosfet equivalent, n-channel power mosfet.
TAB
3 2 1
TO-220
Order code STP110N55F6
VDS 55 V
RDS(on) max. ID 5.2 mΩ 110 A
* Low gate charge
* Very low on-resistance
* High avalanche ruggedness
App.
* Switching applications
Figure 1. Internal schematic diagram
' 7$%
Description
This device is an N-channel Po.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages.
*
6
$0Y
Order code STP110N55F6
Table 1. D.
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