STGWA50M65DF2 igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 50 A
* Tight parameter distri.
* Motor control
* UPS
* PFC
* General purpose inverter
Description
This device is an IGBT developed usin.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.
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