STGWA50HP65FB2 datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
* Co-packaged protection diode
* Minimized tail current
* Tight.

Application

* Welding
* Power factor correction Description E(3) The newest IGBT 650 V HB2 series represents an evolution.

Description

E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at lo.

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