STGWA15H120DF2, STGW15H120DF2 Datasheet (STMicroelectronics)

STGWA15H120DF2, STGW15H120DF2, IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Furthermore,

STGWA15H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V @ IC = 15 A

* 5 μs minimum short circuit withstand time at TJ = 150 °C

* Safe paralleling

* Low thermal resistance

* V