STGWA50M65DF2 Datasheet - STMicroelectronics

STGWA50M65DF2, IGBT

TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 l.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGWA50M65DF2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGWA50M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

315.74 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ. ) @ IC = 50 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resis

Applications

* Motor control
* UPS
* PFC

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