STGW80H65FB datasheet, igbt equivalent, STMicroelectronics

Features and benefits

TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VC.

Application

Figure 1. Internal schematic diagram C (2 or TAB)
* Photovoltaic inverters
* High frequency converters Descrip.

Description

G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to m.

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