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STGW100N30 Datasheet, STMicroelectronics

STGW100N30 igbt equivalent, fast igbt.

STGW100N30 Avg. rating / M : 1.0 rating-11

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STGW100N30 Datasheet

Features and benefits


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* Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = .

Application

State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage.

Description

Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Marking GF100N30 GP100N30 GW100N30 Package TO-220F.

Image gallery

STGW100N30 Page 1 STGW100N30 Page 2 STGW100N30 Page 3

TAGS

STGW100N30
Fast
IGBT
STGW100H65FB2-4
STGW10M65DF2
STGW12NB60H
STMicroelectronics

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