STGW15H120DF2 Datasheet | STMicroelectronics

Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - VCE(sat) = 2.1 V @ IC = 15 A - 5 μs minimum short circuit withstand time at TJ = 150 °C - Safe paralleling - Low thermal resistance - Very fast recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGW15H120DF2 STGWA15H120DF2 Product summary Order code Marking G15H120DF2 Package TO-247 Packing Tube Order code STGWA15H120DF2 Marking G15H120DF2 Package TO-247 long leads Packing Tube DS9296 - Rev 6 - April 2021 For further information contact your local STMicroelectronics sales office. .st. STGW15H120DF2, STGWA15H120DF2 Electrical...