* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V @ IC = 15 A
* 5 μs minimum short.

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* High f.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of .

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