logo

STGW15H120DF2 Datasheet, STMicroelectronics

STGW15H120DF2 igbt equivalent, igbt.

STGW15H120DF2 Avg. rating / M : 1.0 rating-13

datasheet Download

STGW15H120DF2 Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V @ IC = 15 A
* 5 μs minimum short.

Application


* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* High f.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of .

Image gallery

STGW15H120DF2 Page 1 STGW15H120DF2 Page 2 STGW15H120DF2 Page 3

TAGS

STGW15H120DF2
IGBT
STGW15M120DF3
STGW100H65FB2-4
STGW100N30
STMicroelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts