STGW15H120DF2
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V @ IC = 15 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling
- Low - Very fast recovery antiparallel diode
