STGW15M120DF3 igbt equivalent, trench gate field-stop igbt.
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.85 V (typ.) @ IC = 15 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resis.
* Industrial drives
* UPS
* Solar
* Welding
Description
This device is an IGBT developed using an advanc.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where lo.
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