Datasheet4U Logo Datasheet4U.com

STGW15M120DF3 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.

Features

  • 10 µs of short-circuit withstand time.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 15 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and fast recovery antiparallel diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGW12NB60H N-CHANNEL IGBT ST Microelectronics
STGW12NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGW15H120DF2 IGBT
STGW100H65FB2-4 IGBT
STGW100N30 Fast IGBT
STGW10M65DF2 IGBT
STGW19NC60H 19 A - 600 V - very fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data    72 72ORQJOHDGV Figure 1.Internal schematic diagram & RU7$% *  Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.
Published: |