STGW100H65FB2-4 datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
* Minimized tail current
* Tight parameter distribution
* Low .

Application

* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers E(2) NG4K3E2C1TAB_no_diode .

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, .

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