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STGW80H65DFB-4 Datasheet, STMicroelectronics

STGW80H65DFB-4 igbt equivalent, igbt.

STGW80H65DFB-4 Avg. rating / M : 1.0 rating-11

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STGW80H65DFB-4 Datasheet

Features and benefits


* VCE(sat) = 1.6 V (typ.) @ IC = 80 A
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Tight param.

Application

K(3)
* Photovoltaic inverters
* High frequency converters E(2) NG4K3E2C1_TAB Description This device is a.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.

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STGW80H65DFB-4 Page 1 STGW80H65DFB-4 Page 2 STGW80H65DFB-4 Page 3

TAGS

STGW80H65DFB-4
IGBT
STGW80H65DFB
STGW80H65FB
STGW80V60DF
STMicroelectronics

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