* VCE(sat) = 1.6 V (typ.) @ IC = 80 A
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Tight param.

K(3)
* Photovoltaic inverters
* High frequency converters E(2) NG4K3E2C1_TAB Description This device is a.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.

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