STGW60H65DRF datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Very high speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* 6 µs short-circuit withstand time
* Ult.

Application

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* High s.

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Fu.

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