STGW60H60DLFB datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ.) @ IC = 60 A
* Tight param.

Application

* Induction heating
* Microwave oven
* Resonant converters G (1) E (3) Description This device is an IGBT .

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the eff.

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