STGW60H65DFB-4 datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Maximum junction temperature: TJ = 175 °C
* Excellent switching performance thanks to the extra driving kelvin pin
* Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A.

Application

* Photovoltaic inverters
* High-frequency converters DescriptionE(2) NG4K3E2C1_TAB This device is an IGBT dev.

Description

(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maxi.

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