STGW60H65DF field stop trench gate IGBT

STMicroelectronics

STGW60H65DF Description

STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode .
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

STGW60H65DF Features

* High speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* 6 µs short-circuit withstand time
* Very fast soft recovery antiparallel diode

STGW60H65DF Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

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Datasheet Details

Part number: STGW60H65DF
Manufacturer: STMicroelectronics ↗
File Size: 853.59 KB
Datasheet: STGW60H65DF-STMicroelectronics.pdf
Description: field stop trench gate IGBT

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field stop trench gate IGBT STMicroelectronics

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