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STGW60H65DF - field stop trench gate IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.

Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • 6 µs short-circuit withstand time.
  • Very fast soft recovery antiparallel diode.
  • Lead free package.

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Full PDF Text Transcription

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STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Very fast soft recovery antiparallel diode ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.
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