STGW40S120DF3 igbt equivalent, trench gate field-stop igbt.
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 40 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resist.
* Industrial drives
* UPS
* Solar
* Welding
*
(
Description
This device is an IGBT developed .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 406.81KB)