72 72ORQJOHDGV Figure 1.Internal schematic diagram
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.85 V (typ.) @ IC = 40 A
* Tight pa.

* Industrial drives
* UPS
* Solar
* Welding &RU7$% Description * ( This device is an .

* ( This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter s.

STGW40H120DF2

STGW40H65DFB

STGW40H65DFB-4

STGW40H65FB

STGW40N120KD

STGW40NC60KD

STGW40NC60V

STGW40NC60WD

STGW40S120DF3

STGW40V60DF

STGW40V60F

STGW45HF60WD

STGW45HF60WDI

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts