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STGW40H120F2 - 1200V 40A IGBT

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 40 A.
  • 5 μs minimum short-circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.

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STGW40H120F2, STGWA40H120F2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 3 2 1 TO-247 3 12 TO-247 long leads G(1) C(2, TAB) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 40 A • 5 μs minimum short-circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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