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STGW40H65DFB-4 - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • TO247-4 2 34 1 C(1, TAB).
  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.
  • Excellent switching performance thanks to the extra driving kelv.

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STGW40H65DFB-4 Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features TO247-4 2 34 1 C(1, TAB) • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode • Excellent switching performance thanks to the extra driving kelvin pin G(4) K(3) Applications • Photovoltaic inverters E(2) • High frequency converters NG4K3E2C1_TAB Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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