STGW40H65FB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Very low saturation voltage: VCE(sat) = 1.6 V (typ) @.
* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers
Description
These devices are.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the effici.
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