STGO30H60DLLFBAG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* Logic level gate drive

Application

* Automotive injection Description This device is an IGBT developed using an advanced proprietary trench gate fields.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

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