STB30N65M2AG mosfet equivalent, n-channel power mosfet.
Order code STB30N65M2AG
VDS 650 V
RDS(on) max. 0.18 Ω
ID 20 A
* AEC-Q101 qualified
* Extremely low gate charge
* Excellent output capacitance (COSS) profi.
* Switching applications
S(3)
AM01475V1
Description
This device is an N-channel Power MOSFET developed using MD.
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.
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