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STB30NF20L
N-channel 200 V, 0.065 Ω, 30 A STripFET™ Power MOSFET in D2PAK package
Datasheet — production data
Features
Order code VDSS RDS(on) ID STB30NF20L 200 V 0.075 Ω 30 A
PTOT 150 W
■ Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS* Qg) ■ Very good manufacturing repeatability ■ Very low intrinsic capacitance
Applications
■ Automotive
Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
STB30NF20L Datasheet
