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N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET™ POWER MOSFET
TYPE STB30NE06L
s s s s
STB30NE06L
VDSS 60 V
RDS(on) <0.05 Ω
ID 30 A
s
TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB30NE06L Datasheet
