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STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type
VDSS @TJ max
RDS(on) max
ID
STB30NM60ND
)STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND
650 V
0.13 Ω
25 A 25 A 25 A(1) 25 A 25 A
rod1. Limited only by maximum temperature allowed
P■ The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le■ 100% avalanche tested o■ Low input capacitance and gate charge bs■ Low gate input resistance O■ Extremely high dv/dt and avalanche -capabilities
ct(s)Application
du■ Switching applications
ProDescription
teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology.
STB30NM60ND Datasheet
