STB24NM65N mosfet equivalent, n-channel power mosfet.
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VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V
RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω
ID
3
STB24NM65N STI24NM65N STF24NM65N ST.
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .
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