STB24N60DM2 mosfet equivalent, n-channel power mosfet.
Order codes
STB24N60DM2 STP24N60DM2 STW24N60DM2
VDS @ TJmax
650 V
RDS(on) max
ID
0.20 Ω 18 A
* Extremely low gate charge and input capacitance
* Lower RDS(o.
G(1)
* Switching applications
Description
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery b.
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
S(3)
AM01476v1
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structu.
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