STB24N60M2 mosfet equivalent, n-channel power mosfet.
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2
650 V
0.19 Ω 18 A
* Extremely low gate charge
* Lower RDS(on) x area vs pr.
* Switching applications
G(1) S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs developed usin.
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowes.
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