STB24NM60N mosfet equivalent, power mosfet.
Order codes STB24NM60N
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VDSS (@Tjmax) 650 V
RDS(on) max. < 0.19 Ω
ID 17 A
100% avalanche tested Low input capacitance and gate charge Low gate input .
Description
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This.
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance .
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