Datasheet4U Logo Datasheet4U.com

STB24N60DM2 - N-Channel Power MOSFET

Description

technology: MDmesh II Plus™ low Qg.

Features

  • Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A.
  • Extremely low gate charge and input capacitance.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • Extremely high dv/dt and avalanche capabilities.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB24NF10 N-CHANNEL POWER MOSFET ST Microelectronics
STB24NM60N N-Channel MOSFET INCHANGE
STB24NM65N N-Channel MOSFET INCHANGE
STB200N6F3 60V N-Channel Power MOSFET ST Microelectronics
STB200NF03 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB24N60M2 N-CHANNEL POWER MOSFET
STB24N60M6 N-CHANNEL POWER MOSFET
STB24N65M2 N-channel MOSFET
STB24NM60N Power MOSFET
STB24NM65N N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.
Published: |