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STB24NM60N
N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power MOSFET D²PAK
Features
Order codes STB24NM60N
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VDSS (@Tjmax) 650 V
RDS(on) max. < 0.19 Ω
ID 17 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
3 1
D²PAK
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal schematic diagram
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Table 1.
STB24NM60N Datasheet
