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SGSP301 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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rrj * 7 W -» SGS-THOMSON RjflDeMlILligirmOD^i SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301 V DSS 100 V R DS(on) 1.4 Q *D 2.0 A • HIGH SPEED SWITCHING APPLICATIONS • GENERAL PURPOSE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli­ cations include general purpose low voltage swit­ ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po­ wer switching transistors.
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