PD85035S-E transistor equivalent, rf power transistor.
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Excellent thermal stability Common source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD protection I.
It operates at 13.6V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearit.
The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6V in common source mode at frequencies of up to .
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