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PD85035C Datasheet, STMicroelectronics

PD85035C transistor equivalent, rf power transistor.

PD85035C Avg. rating / M : 1.0 rating-12

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PD85035C Datasheet

Features and benefits


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* Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD.

Application

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearit.

Description

The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1.

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TAGS

PD85035C
power
transistor
STMicroelectronics

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