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PD85015-E Datasheet, STMicroelectronics

PD85015-E transistor equivalent, rf power transistor.

PD85015-E Avg. rating / M : 1.0 rating-14

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PD85015-E Datasheet

Features and benefits


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* Excellent thermal stability Common source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection.

Application

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, lineari.

Description

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up .

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TAGS

PD85015-E
power
transistor
PD85004
PD85025C
PD85035-E
STMicroelectronics

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