PD85015-E transistor equivalent, rf power transistor.
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Excellent thermal stability Common source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection.
It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, lineari.
The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up .
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