PD85035-E datasheet, transistor equivalent, STMicroelectronics

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Features and benefits

* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
* Plastic package
* ESD protection
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Application

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, lineari.

Description

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to.

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