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PD57070-E Datasheet, STMicroelectronics

PD57070-E transistor equivalent, rf power transistor.

PD57070-E Avg. rating / M : 1.0 rating-11

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PD57070-E Datasheet

Features and benefits


* Excellent thermal stability
* Common source configuration
* POUT = 70 W with 14.7dB gain @945 MHz/28 V
* New RF plastic package Description The device i.

Application

It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a.

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz..

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TAGS

PD57070-E
POWER
transistor
STMicroelectronics

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