PD57002-E Overview
Key Specifications
Mount Type: Surface Mount
Pins: 3
Max Frequency: 1 GHz
Max Operating Temp: 165 °C
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package
