Datasheet Details
| Part number | PD57002-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.50 KB |
| Description | RF POWER transistor |
| Datasheet |
 PD57002-E Datasheet
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| Part number | PD57002-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.50 KB |
| Description | RF POWER transistor |
| Datasheet |
PD57002-E Datasheet
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The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.
The device is designed for high gain and broadband performance operating in common source mode at 28 V.
It is ideal for digital cellular BTS applications requiring high linearity.
PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production.
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