PD57002-E datasheet, transistor equivalent, STMicroelectronics

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datasheet Download (Size : 361.50KB)

Features and benefits

* Excellent thermal stability
* Common source configuration
* POUT = 2 W with 15dB gain @ 960 MHz / 28 V
* New RF plastic package Description The device .

Application

at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mo.

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performanc.

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