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PD57002-E - RF POWER transistor

PD57002-E Description

PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet * production data .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial ap.

PD57002-E Features

* Excellent thermal stability
* Common source configuration
* POUT = 2 W with 15dB gain @ 960 MHz / 28 V

PD57002-E Applications

* at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC ap

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POWER transistor STMicroelectronics
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