PD57006-E Datasheet | STMicroelectronics

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features - Excellent thermal stability - mon source configuration - POUT = 6 W with 15dB gain @ 945 MHz / 28 V - New RF plastic package Description The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity...