PD57018-E datasheet, transistor equivalent, STMicroelectronics

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 911.62KB)

Features and benefits

* Excellent thermal stability
* Common source configuration
* POUT = 18 W with 16.5dB gain@945 MHz/28 V
* New RF plastic package Description The device is.

Application

It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 G.

Image gallery