PD57030-E datasheet, transistor equivalent, STMicroelectronics

Features and benefits

* Excellent thermal stability
* Common source configuration
* POUT = 30 W with 14dB gain @ 945 MHz / 28 V
* New RF plastic package Description The device .

Application

It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a.

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz..

Image gallery