PD54008-E
Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.
Key Features
- Excellent thermal stability
- POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V
- New RF plastic package
- Part: PD54008-E
- Description: RF POWER transistor
- Category: Transistor
- Manufacturer: STMicroelectronics
- Size: 480.65 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| PD54003-E | STMicroelectronics | RF POWER transistor |