Datasheet4U Logo Datasheet4U.com

PD54008-E - RF POWER transistor

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 7 V in common source mode at frequencies of up to 1 GHz.

Overview

PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V.
  • New RF plastic package.