Download the PD54003S-E datasheet PDF.
This datasheet also covers the PD54003-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 7V in common source mode at frequencies of up to 1GHz.
Key Features
Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package
PowerSO-10RF (formed lead).
Note: The manufacturer provides a single datasheet file (PD54003-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for PD54003S-E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PD54003S-E. For precise diagrams, tables, and layout, please refer to the original PDF.
www.DataSheet4U.com PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal...
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ement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package PowerSO-10RF (formed lead) Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal sol
PD54003S-E Datasheet
