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PD54003-E - RF POWER transistor

General Description

The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 7V in common source mode at frequencies of up to 1GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package PowerSO-10RF (formed lead).

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STMicroelectronics Logo PD54003L RF POWER TRANSISTORS STMicroelectronics

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Full PDF Text Transcription for PD54003-E (Reference)

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www.DataSheet4U.com PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal...

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ement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package PowerSO-10RF (formed lead) Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal sol